HUF76131SK8
TM
Data Sheet
June 2000
File Number
4396.5
10A, 30V, 0.013 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
廬
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76131.
Features
鈥?Logic Level Gate Drive
鈥?10A, 30V
鈥?Ultra Low On-Resistance, r
DS(ON)
= 0.013鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Thermal Impedance SPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
SOURCE(1)
DRAIN(8)
Ordering Information
PART NUMBER
HUF76131SK8
PACKAGE
MS-012AA
BRAND
76131SK8
SOURCE(2)
DRAIN(7)
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T
to obtain the variant in tape and reel, e.g., HUF76131SK8T.
SOURCE(3)
DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET廬 is a registered trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Copyright
漏
Intersil Corporation 2000.
next