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HUF76129S3ST Datasheet

  • HUF76129S3ST

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | ...

  • 11頁(yè)

  • ETC

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HUF76129P3, HUF76129S3S
Data Sheet
December 2001
56A, 30V, 0.016 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET鈩?process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76129.
Features
鈥?Logic Level Gate Drive
鈥?56A, 30V
鈥?/div>
Ultra Low On-Resistance,
r
DS(ON)
= 0.016鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Temperature Compensating SABER
漏
Model
鈥?Thermal Impedance SPICE Model
鈥?Thermal Impedance SABER Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
HUF76129P3
HUF76129S3S
PACKAGE
TO-220AB
TO-263AB
BRAND
76129P
76129S
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76129S3ST.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
漏2001 Fairchild Semiconductor Corporation
HUF76129P3, HUF76129S3S Rev. B

HUF76129S3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 56 A

  • 0.016 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-263AB

  • Reel

  • 32 ns, 35 ns

  • - 40 C

  • 105 W

  • 90 ns, 30 ns

  • 800

  • 28 ns, 68 ns

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