HUF76121D3, HUF76121D3S
Data Sheet
December 2001
20A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET鈩?process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76121.
Features
鈥?Logic Level Gate Drive
鈥?20A, 30V
鈥?Ultra Low On-Resistance, r
DS(ON)
= 0.023
鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Temperature Compensating SABER
漏
Model
鈥?Thermal Impedance SPICE Model
鈥?Thermal Impedance SABER Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
HUF76121D3
HUF76121D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
76121D
76121D
Symbol
D
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76121D3ST.
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
漏2001 Fairchild Semiconductor Corporation
HUF76121D3, HUF76121D3S Rev. B
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