HUF76113DK8
Data Sheet
December 2001
6A, 30V, 0.032 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is
廬
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Features
鈥?Logic Level Gate Drive
鈥?6A, 30V
鈥?Ultra Low On-Resistance, r
DS(ON)
= 0.032
鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Temperature Compensating SABER
鈩?/div>
Model
鈥?Thermal Impedance SPICE Model
鈥?Thermal Impedance SABER Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
HUF76113DK8
PACKAGE
MS-012AA
BRAND
76113DK8
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T
to obtain the variant in tape and reel, e.g., HUF76113DK8T.
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
漏2001 Fairchild Semiconductor Corporation
HUF76113DK8 Rev. B
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