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HUF76013P3 Datasheet

  • HUF76013P3

  • 20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs

  • 11頁(yè)

  • INTERSIL   INTERSIL

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HUF76013P3, HUF76013D3S
TM
Data Sheet
April 2000
File Number
4849
20A, 20V, 0.022 Ohm, N-Channel, Logic
Level Power MOSFETs
The HUF76013 is an application-speci鏗乧 MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system ef鏗乧iency.
Features
鈥?20A, 20V
- r
DS(ON)
= 0.022鈩? V
GS
=
10V
- r
DS(ON)
= 0.030鈩? V
GS
=
5V
鈥?PWM Optimized for Synchronous Buck Applications
鈥?Fast Switching
Symbol
D
G
鈥?Low Gate Charge
- Q
g
Total 14nC (Typ)
S
Packaging
HUF76013D3S
JEDEC TO-252AA
DRAIN (FLANGE)
HUF76013P3
JEDEC TO-220AB
SOURCE
DRAIN
GATE
鈥?Low Capacitance
- C
ISS
624pF (Typ)
- C
RSS
71pF (Typ)
Ordering Information
PART NUMBER
HUF76013P3
PACKAGE
TO-220AB
TO-252AA
BRAND
76013P
76013D
GATE
SOURCE
HUF76013D3S
DRAIN
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.
Absolute Maximum Ratings
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
STG
T
L
T
pkg
R
胃JC
R
胃JA
NOTE:
1. T
J
= 25
o
C to 125
o
C.
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
PARAMETER
HUF76013P3,
HUF76013D3S
20
20
鹵16
20
20
Figure 4
50
0.4
-55 to 150
300
260
2.5
62
100
UNITS
V
V
V
A
A
A
W
W/
o
C
o
C
o
C
o
C
o
C/W
o
C/W
o
C/W
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Pulsed Drain Current
Power Dissipation
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
THERMAL SPECIFICATIONS
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
漏
Intersil Corporation 2000
UltraFET廬 is a registered trademark of Intersil Corporation.

HUF76013P3 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 20V

  • 20A

  • 22 毫歐 @ 20A，10V

  • 3V @ 250µA

  • 17nC @ 10V

  • 624pF @ 20V

  • 50W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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