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HUF76009P3 Datasheet

  • HUF76009P3

  • 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs

  • 12頁

  • FAIRCHILD

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HUF76009P3, HUF76009D3S
Data Sheet
December 2001
20A, 20V, 0.027 Ohm, N-Channel, Logic
Level Power MOSFETs
THE HUF76009 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.
Features
鈥?20A, 20V
- r
DS(ON)
= 0.027鈩? V
GS
=
10V
- r
DS(ON)
= 0.039鈩? V
GS
=
5V
鈥?PWM optimized for synchronous buck applications
鈥?Fast Switching
Symbol
D
G
鈥?Low Gate Charge
- Q
g
Total 11nC (Typ)
S
Packaging
HUF76009D3S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
HUFD76009P3
JEDEC TO-220AB
SOURCE
DRAIN
GATE
鈥?Low Capacitance
- C
ISS
470pF (Typ)
- C
RSS
50pF (Typ)
Ordering Information
PART NUMBER
HUF76009P3
HUF76009D3S
PACKAGE
TO-220AB
TO-252AA
BRAND
76009P
76009D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.
Absolute Maximum Ratings
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
STG
T
L
T
pkg
R
胃JC
R
胃JA
NOTE:
1. T
J
= 25
o
C to 125
o
C.
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
HUF76009P3,
HUF76009D3S
20
20
鹵16
20
16
Figure 4
41
0.33
-55 to 150
300
260
3.04
62
100
UNITS
V
V
V
A
A
A
W
W/
o
C
o
C
o
C
o
C
o
C/W
o
C/W
o
C/W
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Pulsed Drain Current
Power Dissipation
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Thermal Resistance Junction to Case, TO-220, TO-252
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-252
THERMAL SPECIFICATIONS
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2001 Fairchild Semiconductor Corporation
HUF76009P3, HUF76009D3S Rev. B

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