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HUF75945S3ST Datasheet

  • HUF75945S3ST

  • 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs

  • 210.25KB

  • 10頁

  • FAIRCHILD

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HUF75945G3, HUF75945P3, HUF75945S3ST
Data Sheet
December 2001
38A, 200V, 0.071 Ohm, N-Channel,
UltraFET廬 Power MOSFETs
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.071鈩? V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
DRAIN
(FLANGE)
SOURCE
Ordering Information
PART NUMBER
HUF75945G3
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75945G
75945P
75945S
Symbol
D
HUF75945P3
HUF75945S3ST
NOTE: When ordering, use the entire part number.
G
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75945G3,HUF75945P3,
HUF75945S3ST
UNITS
V
V
V
A
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
200
200
鹵20
38
27
Figure 4
Figures 6, 14, 15
310
2.07
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B

HUF75945S3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 200 V

  • +/- 20 V

  • 38 A

  • 0.071 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-263AB

  • Reel

  • 80 ns

  • - 55 C

  • 310 W

  • 64 ns

  • 65 ns

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