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HUF75652G3 Datasheet

  • HUF75652G3

  • 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

  • 9頁

  • INTERSIL   INTERSIL

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HUF75652G3
Data Sheet
October 1999
File Number
4746.1
75A, 100V, 0.008 Ohm, N-Channel
UltraFET Power MOSFET
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.008鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE
廬
and SABER
漏
Electrical Models
- Spice and SABER
漏
Thermal Impedance Models
- www.semi.Intersil.com
鈥?Peak Current vs Pulse Width Curve
DRAIN
(TAB)
HUF75652G3
鈥?UIS Rating Curve
Symbol
D
Ordering Information
PART NUMBER
HUF75652G3
G
PACKAGE
TO-247
BRAND
75652G
NOTE: When ordering, use the entire part number.
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75652G3
UNITS
V
V
V
A
A
100
100
鹵20
75
75
Figure 4
Figures 6, 17, 18
515
3.44
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET鈩?is a trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER
漏
is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999.

HUF75652G3 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 150

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 100V

  • 75A

  • 8 毫歐 @ 75A，10V

  • 4V @ 250µA

  • 475nC @ 20V

  • 7585pF @ 25V

  • 515W

  • 通孔

  • TO-247-3

  • TO-247

  • 管件

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