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HUF75639S3ST Datasheet

  • HUF75639S3ST

  • TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 53A I(D) |...

  • 9頁

  • ETC

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HUF75639G3, HUF75639P3, HUF75639S3S
TM
Data Sheet
August 2000
File Number
4477.8
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET鈩?process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75639.
Features
鈥?56A, 100V
鈥?Simulation Models
- Temperature Compensated PSPICE
廬
and SABER
鈩?/div>
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUF75639G3
HUF75639P3
HUF75639S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75639G
75639P
75639S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET廬 is a registered trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER鈩?is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright 漏 Intersil Corporation 2000

HUF75639S3ST 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 56A

  • 25 毫歐 @ 56A，10V

  • 4V @ 250µA

  • 130nC @ 20V

  • 2000pF @ 25V

  • 200W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • TO-263AB

  • 帶卷 (TR)

  • HUF75639S3ST-NDHUF75639S3STTR

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