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HUF75639S3R4851 Datasheet

  • HUF75639S3R4851

  • 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

  • 139.51KB

  • 10頁

  • INTERSIL   INTERSIL

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HUF75639S3R4851
TM
Data Sheet
April 2000
File Number
4854
56A, 115V, 0.025 Ohm, N-Channel
UltraFET Power MOSFET
This N-Channel power MOSFETs is manufactured using the
innovative UltraFET鈩?process. This advanced process
technology achieves the lowest possible on-resistance per
silicon area, resulting in outstanding performance. This
device is capable of withstanding high energy in the
avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power ef鏗乧iency is important, such as
switching regulators, switching converters, motor drivers,
relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Formerly developmental type TA75639.鈥?/div>
Features
鈥?56A, 115V
鈥?Simulation Models
- Temperature Compensated PSPICE
TM
and SABER
漏
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.Intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
Ordering Information
PART NUMBER
HUF75639S3R4851
PACKAGE
TO-262AA
R4851
BRAND
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Symbol
D
G
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75639S3R4851
UNITS
V
V
V
A
115
115
鹵20
56
Figure 4
Figures 6, 14, 15
200
1.35
-55 to 175
300
260
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
漏
Intersil Corporation 2000
PSPICE廬 is a registered trademark of MicroSim Corporation.
|
SABER鈩?is a trademark of Analogy, Inc.
UltraFET廬 is a registered trademark of Intersil Corporation.

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