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HUF75631SK8 Datasheet

  • HUF75631SK8

  • 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

  • 358.92KB

  • 11頁(yè)

  • INTERSIL   INTERSIL

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HUF75631SK8
Data Sheet
October 1999
File Number
4785
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.039鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE
廬
and SABER
漏
Electrical Models
- Spice and SABER
漏
Thermal Impedance Models
- www.Intersil.com
鈥?Peak Current vs Pulse Width Curve
5
1
2
3
4
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
鈥?UIS Rating Curve
Ordering Information
PART NUMBER
HUF75631SK8
PACKAGE
MS-012AA
BRAND
75631SK8
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T
to obtain the variant in tape and reel, e.g., HUF75631SK8T.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
HUF75631SK8
UNITS
V
V
V
A
A
100
100
鹵20
5.5
3.5
Figure 4
Figures 6, 14, 15
2.5
20
-55 to 150
300
260
W
mW/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
3. 152
o
C/W measured using FR-4 board with 0.054 in
2
(34.8 mm
2
) copper pad at 1000 seconds
4. 189
o
C/W measured using FR-4 board with 0.0115 in
2
(7.42 mm
2
) copper pad at 1000 seconds
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET鈩?is a trademark of Intersil Corporation. PSPICE鈩?is a registered trademark of MicroSim Corporation.
SABER
漏
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

HUF75631SK8 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 100 V

  • +/- 20 V

  • 5.5 A

  • 0.039 Ohms

  • Single Quad Drain Triple Source

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Tube

  • 31 ns

  • - 55 C

  • 2.5 W

  • 23 ns

  • 98

  • 39 ns

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