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HUF75623S3ST Datasheet

  • HUF75623S3ST

  • 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs

  • 10頁

  • FAIRCHILD

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HUF75623P3, HUF75623S3ST
Data Sheet
December 2001
22A, 100V, 0.064 Ohm, N-Channel,
UltraFET廬 Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.064鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
GATE
SOURCE
DRAIN
(FLANGE)
HUF75623P3
HUF75623S3ST
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
75623P
75623S
HUF75623P3
HUF75623S3ST
G
S
NOTE: When ordering, use the entire part number i.e., HUF75623P3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75623P3, HUF75623S3ST
UNITS
V
V
V
A
A
100
100
鹵20
22
15
Figure 4
Figures 6, 14, 15
85
0.57
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUF75623P3, HUF75623S3ST Rev. B

HUF75623S3ST 產(chǎn)品屬性

  • 800

  • 分離式半導體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 22A

  • 64 毫歐 @ 22A，10V

  • 4V @ 250µA

  • 52nC @ 20V

  • 790pF @ 25V

  • 85W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 管件

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