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HUF75545P3 Datasheet

  • HUF75545P3

  • 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET

  • 10頁(yè)

  • FAIRCHILD

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HUF75545P3, HUF75545S3, HUF75545S3S
Data Sheet
September 2002
75A, 80V, 0.010 Ohm, N-Channel,
UltraFET
廬
Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.010鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
HUF75545P3
HUF75545S3S
JEDEC TO-262AA
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
HUF75545S3
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
75545P
75545S
75545S
HUF75545P3
Symbol
D
HUF75545S3
HUF75545S3S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75545P3, HUF75545S3,
HUF75545S3S
80
80
鹵20
75
73
Figure 4
Figure 6
270
1.8
-55 to 175
300
260
UNITS
V
V
V
A
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C

HUF75545P3 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 80V

  • 75A

  • 10 毫歐 @ 75A，10V

  • 4V @ 250µA

  • 235nC @ 20V

  • 3750pF @ 25V

  • 270W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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