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HUF75542S3ST Datasheet

  • HUF75542S3ST

  • TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | ...

  • 168.88KB

  • 11頁

  • ETC

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HUF75542P3, HUF75542S3S
TM
Data Sheet
June 2000
File Number
4845.2
75A, 80V, 0.014 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.014鈩? V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
GATE
SOURCE
DRAIN (FLANGE)
HUF75542P3
DRAIN
(FLANGE)
HUF75542S3S
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
75542P
75542S
HUF75542P3
HUF75542S3S
G
S
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T
to obtain the variant in tape and reel, e.g., HUF75542S3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75542P3, HUF75542S3S
UNITS
V
V
V
A
A
80
80
鹵20
75
58
Figure 4
Figures 6, 14, 15
230
1.54
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET鈩?is a trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
Intersil Corporation 2000
SABER漏 is a Copyright of Analogy Inc.

HUF75542S3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 80 V

  • +/- 20 V

  • 75 A

  • 0.014 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-263AB

  • Reel

  • 80 ns

  • - 55 C

  • 230 W

  • 117 ns

  • 50 ns

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