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HUF75309T3ST Datasheet

  • HUF75309T3ST

  • 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET

  • 92.00KB

  • 8頁(yè)

  • INTERSIL   INTERSIL

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HUF75309T3ST
Data Sheet
June 1999
File Number
4377.3
3A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET鈩?process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Features
鈥?3A, 55V
鈥?Ultra Low On-Resistance, r
DS(ON)
= 0.070鈩?/div>
鈥?Diode Exhibits Both High Speed and Soft Recovery
鈥?Temperature Compensating PSPICE鈩?Model
鈥?Thermal Impedance SPICE Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUF75309T3ST
PACKAGE
SOT-223
5309
S
BRAND
G
NOTE: HUF75309T3ST is available only in tape and reel.
Packaging
SOT-223
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
23
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE鈩?is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

HUF75309T3ST 產(chǎn)品屬性

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 3A

  • 70 毫歐 @ 3A，10V

  • 4V @ 250µA

  • 23nC @ 20V

  • 352pF @ 25V

  • 1.1W

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223-3

  • 帶卷 (TR)

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