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HTIP122 Datasheet

  • HTIP122

  • NPN EPITAXIAL PLANAR TRANSISTOR

  • 4頁(yè)

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 1/4
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP122 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25擄C)
TO-220
鈥?/div>
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
擄C
Junction Temperature ................................................................................................ +150
擄C
Maximum
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation (Tc=25擄C)................................................................................................. 65 W
Total Power Dissipation (Ta=25擄C)................................................................................................... 2 W
鈥?/div>
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 100 V
BVCEO Collector to Emitter Voltage .............................................................................................. 100 V
BVEBO Emitter to Base Voltage ....................................................................................................... 5 V
IC Collector Current (Continuous)...................................................................................................... 5 A
IC Collector Current (Peak)................................................................................................................ 8 A
Characteristics
(Ta=25擄C)
Symbol
BVCBO
*BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
-
-
-
-
-
-
1
1
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
500
2
2
4
2.5
-
-
200
Unit
V
V
uA
uA
mA
V
V
V
K
K
pF
Test Conditions
IC=1mA, IE=0
IC=100mA
VCB=100V
VCE=50V
VEB=5V
IC=3A, IB=12mA
IC=5A, IB=20mA
IC=3A, VCE=3V
IC=0.5A, VCE=3V
IC=3A, VCE=3V
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
鈮?80us,
Duty Cycle鈮?%
Darlington Schematic
C
B
R1
R2
E
HTIP122
HSMC Product Specification

HTIP122相關(guān)型號(hào)PDF文件下載

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    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC
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    HSMC [Hi-S...
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC
  • 英文版
    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
  • 英文版
    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC
  • 英文版
    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
  • 英文版
    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC
  • 英文版
    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC
  • 英文版
    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
  • 英文版
    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC
  • 英文版
    PNP EPITAXIAL PLANAR TRANSISTOR
    HSMC [Hi-S...
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    NPN EPITAXIAL PLANAR TRANSISTOR
    HSMC
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    HSMC [Hi-S...

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