Operation: 25mA max. (V
10mA max. (V
鈥?/div>
Standby: 30mA max. (V
CC
=5V)
10mA max. (V
CC
=3V)
Access time: 120ns max. (V
CC
=5V)
250ns max. (V
CC
=3V)
路
路
路
路
路
路
524288麓8-bit of mask ROM
Mask option: chip enable CE/CE/OE1/OE1,
and output enable OE/OE/NC
TTL compatible inputs and outputs
Tristate outputs
Fully static operation
Package type: 32-pin DIP/SOP
General Description
The HT23C040 is a read-only memory with
high performance CMOS storage device whose
4096K of memory is arranged into 524288 word
by 8 bits.
For application flexibility, the chip enable and
output enable control pins can be selected as ac-
tive high or active low. This flexibility not only
allows easy interface with most microproces-
sors, but also eliminates bus contention in mul-
tip le b us m ic rop roc es s or s y s te ms . An
additional feature of the HT23C040 is its abil-
ity to enter the standby mode whenever the
chip enable (CE/CE) is inactive, thus reducing
current consumption to below 30mA. The combi-
nation of these functions makes the chip suit-
able for high density low power memory
applications.
1
January 20, 2000