ADE-208-080C(Z)
HSR101
Silicon Schottky Barrier Diode
for Various detector,High speed switching
Rev. 3
Oct. 1995
Features
鈥?Low forward voltage, High efficiency.
鈥?Low reverse current .
鈥?Small Resin Package (SRP) is suitable for
surface mount design.
1
Package Code
SRP
Outline
Cathode mark
Mark
Ordering Information
Type No.
HSR101
Laser Mark
1
2
1. Cathode
2. Anode
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Reverse voltage
Forward current
Junction temperature
Storage temperature
Symbol
V
R
I
F
T
j
Tstg
Value
30
35
100
-55 to +100
Unit
V
mA
擄C
擄C
Electrical Characteristics
(Ta = 25擄C)
Item
Reverse voltage
Reverse current
Forward voltage
Capacitance
Capacitance deviation
Symbol Min
V
R
I
R
V
F
C
鈭咰
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
10
0.70
1.50
0.10
10
鈥?/div>
Unit
V
nA
V
pF
pF
mV
V
Test Condition
I
R
= 10 碌A(chǔ)
V
R
= 10 V
I
F
= 10mA
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 MHz
I
F
= 10mA
*C=200pF ,
Both forward and reverse
direction 1 pulse.
Forward voltage deviation
鈭哣
F
ESD-Capability
鈥?/div>
* Failure criterion ; I
R
鈮?/div>
20nA at V
R
=10V.
** Each group shall uniform a multiple of 4 diodes.
HSR101相關(guān)型號(hào)PDF文件下載
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