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ADE-208-027C(Z)

HSM123

Silicon Epitaxial Planar Diode

for High Speed Switching

Rev. 3

Aug. 1995

Features

鈥?Low capacitance, proof against high voltage.

鈥?Fast recovery time.

鈥?MPAK package is suitable for high density

surface mounting and high speed assembly.

2

Pin Arrangement

3

1

Ordering Information

Type No.

HSM123

Laser Mark

A9

Package Code

MPAK

(Top View)

1 Cathode 2

2 Anode 1

3 Cathode 1

Anode 2

Absolute Maximum Ratings

**

(Ta = 25擄C)

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Symbol

V

RM

V

R

I

FM

I

FSM

*

I

o

T

j

Tstg

Value

85

80

300

4

100

125

-55 to +125

Unit

V

mA

A

mA

擄C

Average forward current

Junction temperature

Storage temperature

* Within 1碌s forward surge current.

** Per one device

Electrical Characteristics

*

(Ta = 25擄C)

Item

Forward voltage

Reverse current

Capacitance

Reverse recovery time

Symbol

V

F1

V

F2

V

F3

I

R

C

trr

Min

鈥?/div>

Typ

0.70

0.79

0.85

鈥?/div>

1.0

鈥?/div>

Max

1.0

1.2

0.1

4.0

3.0

Unit

V

碌A(chǔ)

pF

ns

Test Condition

I

F

= 10 mA

I

F

= 50 mA

I

F

= 100 mA

V

R

= 80 V

V

R

= 0 V, f = 1 MHz

I

F

= 10mA, V

R

=6V, R

L

=50鈩?/div>

* Per one device

型號(hào)

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描述

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HSM123 Datasheet

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