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HSK2474J Datasheet

  • HSK2474J

  • N-Channel MOSFETs

  • 54.37KB

  • 5頁

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
HSK2474J
N - Channel MOSFETs
Description
鈥?/div>
Dynamic dv/dt Rating
鈥?/div>
Repetitive Avalanche rated
鈥?/div>
Surface Mount
鈥?/div>
Straigh Lead
鈥?/div>
Available in Tape&Reel
鈥?/div>
Fast Switching
鈥?/div>
Ease of Paralleling
Features
鈥?/div>
Low Drain-Source ON Resistance - R
DS(ON)
=1.2鈩?Typ.)@ V
DS
=10V, I
D
=1.3A
鈥?/div>
High Forward Transfer Admittance -|Yfs|=1.2S@V
DS
=50V, I
D
=1.3A
鈥?/div>
Low Leakage Current - I
DSS
=100uA (Max.)@V
DS
=200V
鈥?/div>
Enhancement-Mode - V
th
= 2.0~4.0V@V
DS
=4V, I
D
=250uA
Absolute Maximum Ratings
(Ta=25擄C)
鈥?/div>
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
擄C
Junction Temperature .................................................................................................... +150
擄C
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Maximum Power Dissipation
Total Power Dissipation (Tc=25擄C) .................................................................................... 25 W
鈥?/div>
Maximum Voltages and Currents
Drain to Source Breakdown Voltage ................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage....................................................................................................
鹵
20 V
Drain Current (Cont.) ......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
胃JC
R
胃JA
Max.
5
50
Units
擄C/W
擄C/W
HSMC Product Specification

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