ADE-208-170A(Z)
HSK110
Silicon Epitaxial Planar Diode
for UHF/VHF tuner Band Switch
Rev. 1
Jun. 1994
Features
鈥?Low forward resistance. (r
f
= 0.9鈩?max)
鈥?LLD package is suitable for high density surface
mounting and high speed assembly.
1
2nd. band
Cathode band
Outline
Cathode band
2
Ordering Information
Type No. Cathode band 2nd.band Package code
HSK110 White
Blue
LLD
1
2nd. band
2
1. Cathode
2. Anode
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Reverse voltage
Forward current
Operation temperature
Storage temperature
Symbol
V
R
I
F
Topr
Tstg
Value
35
100
-20 to + 60
-55 to +125
Unit
V
mA
擄C
擄C
Electrical Characteristics
(Ta = 25擄C)
Item
Forward voltage
Reverse voltage
Reverse current
Capacitance
Forward resistance
Symbol Min
V
F
V
R
I
R
C
r
f
0.65
35
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1.05
鈥?/div>
0.1
1.2
0.9
Unit
V
V
碌A(chǔ)
pF
鈩?/div>
Test Condition
I
F
= 1 mA
I
R
= 1 碌A(chǔ)
V
R
= 25 V
V
R
= 6 V , f = 1 MHz
I
F
= 2 mA , f = 100 MHz
next
HSK110相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
ETC
-
英文版
hitachi
-
英文版
Silicon Epitaxial Planar Diode for High Speed Switching
HITACHI
-
英文版
Silicon Epitaxial Planar Diode for High Speed Switching
HITACHI [H...
-
英文版
Silicon Epitaxial Planar Diode for High Voltage Switching
HITACHI
-
英文版
Silicon Epitaxial Planar Diode for High Voltage Switching
HITACHI [H...
-
英文版
Silicon N Channel MOS Type
HSMC
-
英文版
Silicon N Channel MOS Type
HSMC [Hi-S...
-
英文版
Rectifier Diode, 1 Element, 0.15A, Silicon
HITACHI
-
英文版
暫無描述
HITACHI
-
英文版
Rectifier Diode, 1 Element, 0.15A, Silicon
HITACHI