AED-208-162A(Z)
HSE11
GaAs Schottky Barrier Diode for
SHF Mixer
Rev. 1
Sep. 1994
Features
鈥?Low noise GaAs schottky.
鈥?Low capacitance. (C =0.4pF max)
Cathode mark
1
Package Code
ERP
2
1. Cathode
2. Anode
Outline
Ordering Information
Type No.
HSE11
Mark
Cathode mark
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Reverse voltage
Forward current
Peak forward current
Junction temperature
Lead temperature
Storage temperature
Symbol
V
R
I
F
I
FM
T
j
T
l
*
T
stg
Value
4.0
50
150
125
230
-55 to +125
Unit
V
mA
mA
擄C
擄C
擄C
* Value at the nearest point from body for 10sec max. (one time)
Electrical Characteristics
(Ta = 25擄C)
Item
Forward voltage
Reverse voltage
Capacitance
Series resistance
ESD capability
Symbol
V
F
V
R
C
r
s
鈥?/div>
Min
鈥?/div>
4.0
鈥?/div>
鈥?/div>
25
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
1.0
鈥?/div>
0.4
1.3
鈥?/div>
Unit
V
V
pF
鈩?/div>
V
Test Condition
I
F
= 50 mA
I
R
= 10 碌A(chǔ)
V
R
= 0 V, f = 1 MHz
r
s
=50V
F3
-150.75V
F2
+100.75V
F1
V
F1
: I
F
=1.0mA , V
F2
: I
F
=2.7mA
V
F3
: I
F
=20mA
* C= 25pF
* Failure criterion ; I
R
鈮?/div>
1碌A(chǔ) at V
R
= 2V
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