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HSD1609S Datasheet

  • HSD1609S

  • NPN EPITAXIAL PLANAR TRANSISTOR

  • 4頁

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6515
Issued Date : 1993.03.15
Revised Date : 2002.01.15
Page No. : 1/4
HSD1609S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD1609S is designed for low frequency high voltage amplifier
applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
TO-92
鈥?/div>
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
擄C
Junction Temperature ...................................................................................... 150
擄C
Maximum
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation (Ta=25擄C) ................................................................................ 900 mW
鈥?/div>
Maximum Voltages and Currents (Ta=25擄C)
VCBO Collector to Base Voltage ....................................................................................... 160 V
VCEO Collector to Emitter Voltage .................................................................................... 160 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics
(Ta=25擄C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
160
160
5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
140
3.8
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=140V, IE=0
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
IE=0, VCB=10V, f=1MHZ
*Pulse Test : Pulse Width
鈮?80us,
Duty Cycle鈮?%
MHz
pF
Classification of hFE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSD1609S
HSMC Product Specification

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