GaAs Beam Lead Schottky
Barrier Ring and Bridge Diodes
Technical Data
HSCH-9301
HSCH-9351
Features
鈥?Gold Tri-Metal System
For Improved Reliability
鈥?Low Capacitance
鈥?Low Series Resistance
鈥?High Cutoff Frequency
鈥?Polyimide Passivation
HSCH-9301
(Junction Side Up)
125 (4.9)
105 (4.1)
183 (7.2)
178 (7.0)
756 (29.8)
746 (29.4)
390 (15.4)
310 (12.2)
Description
The HSCH-9301 ring quad and the
HSCH-9351 bridge quad are
advanced gallium arsenide
Schottky barrier diodes. These
devices are fabricated utilizing
molecular beam epitaxy (MBE)
manufacturing techniques and
feature rugged construction and
consistent electrical performance.
A polyimide coating provides
scratch protection and resistance
to contamination.
125 (4.9)
105 (4.1)
L = 0.1 nH
346 (13.6)
266 (10.5)
712 (28.0)
702 (27.6)
60 (2.4)
50 (2.0)
183 (7.2)
178 (7.0)
9 (0.4)
7 (0.3)
DIMENSIONS IN
碌m
(1/1000 inch)
HSCH-9351
(Junction Side Up)
125 (4.9)
105 (4.1)
183 (7.2)
178 (7.0)
Applications
This line of Schottky diodes is
optimized for use in mixer appli-
cations at millimeter wave
frequencies. Some suggested
mixer types are double balanced
for the ring quad and biased
double balanced for the bridge
quad. The bridge quad can also be
used in sampling circuits.
756 (29.8)
746 (29.4)
390 (15.4)
310 (12.2)
125 (4.9)
105 (4.1)
L = 0.1 nH
346 (13.6)
266 (10.5)
712 (28.0)
702 (27.6)
60 (2.4)
50 (2.0)
183 (7.2)
178 (7.0)
9 (0.4)
7 (0.3)
DIMENSIONS IN
碌m
(1/1000 inch)
3-79
5965-8852E