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GaAs Beam Lead Schottky

Barrier Ring and Bridge Diodes

Technical Data

HSCH-9301

HSCH-9351

Features

鈥?Gold Tri-Metal System

For Improved Reliability

鈥?Low Capacitance

鈥?Low Series Resistance

鈥?High Cutoff Frequency

鈥?Polyimide Passivation

HSCH-9301

(Junction Side Up)

125 (4.9)

105 (4.1)

183 (7.2)

178 (7.0)

756 (29.8)

746 (29.4)

390 (15.4)

310 (12.2)

Description

The HSCH-9301 ring quad and the

HSCH-9351 bridge quad are

advanced gallium arsenide

Schottky barrier diodes. These

devices are fabricated utilizing

molecular beam epitaxy (MBE)

manufacturing techniques and

feature rugged construction and

consistent electrical performance.

A polyimide coating provides

scratch protection and resistance

to contamination.

125 (4.9)

105 (4.1)

L = 0.1 nH

346 (13.6)

266 (10.5)

712 (28.0)

702 (27.6)

60 (2.4)

50 (2.0)

183 (7.2)

178 (7.0)

9 (0.4)

7 (0.3)

DIMENSIONS IN

碌m

(1/1000 inch)

HSCH-9351

(Junction Side Up)

125 (4.9)

105 (4.1)

183 (7.2)

178 (7.0)

Applications

This line of Schottky diodes is

optimized for use in mixer appli-

cations at millimeter wave

frequencies. Some suggested

mixer types are double balanced

for the ring quad and biased

double balanced for the bridge

quad. The bridge quad can also be

used in sampling circuits.

756 (29.8)

746 (29.4)

390 (15.4)

310 (12.2)

125 (4.9)

105 (4.1)

L = 0.1 nH

346 (13.6)

266 (10.5)

712 (28.0)

702 (27.6)

60 (2.4)

50 (2.0)

183 (7.2)

178 (7.0)

9 (0.4)

7 (0.3)

DIMENSIONS IN

碌m

(1/1000 inch)

3-79

5965-8852E

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HSCH-9351相關(guān)型號PDF文件下載

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