Agilent HSCH-9301
GaAs Beam Lead Schottky
Ring Quad Diode
Data Sheet
Features
鈥?Gold tri-metal system for improved
reliability
鈥?Low capacitance
鈥?Low series resistance
鈥?High cutoff frequency
鈥?Polyimide passivation
Description
The HSCH-9301 ring quad uses
advanced gallium arsenide
Schottky barrier diodes. These
diodes are fabricated utilizing
molecular beam epitaxy (MBE)
manufacturing techniques. It
features rugged construction
and consistent electrical perfor-
mance. A polyimide coating
provides scratch protection and
resistance to contamination.
Applications
This Schottky diode is optimized
for use in mixer applications at
millimeter wave frequencies.
HSCH-9301 (Junction Side Up)
125 (4.9)
105 (4.1)
183 (7.2)
178 (7.0)
756 (29.8)
746 (29.4)
390 (15.4)
310 (12.2)
125 (4.9)
105 (4.1)
L = 0.1 nH
346 (13.6)
266 (10.5)
712 (28.0)
702 (27.6)
60 (2.4)
50 (2.0)
183 (7.2)
178 (7.0)
9 (0.4)
7 (0.3)
DIMENSIONS IN
碌m
(1/1000 inch)
1
2
3
4
