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GaAs Beam Lead Schottky

Barrier Diodes

Technical Data

HSCH-9101

HSCH-9201

HSCH-9251

Features

鈥?Gold Tri-Metal System

For Improved Reliability

鈥?Low Capacitance

鈥?Low Series Resistance

鈥?High Cutoff Frequency

鈥?Polyimide Passivation

鈥?Multiple Configurations

HSCH-9101

125 (4.9)

115 (4.5)

280 (11.0)

200 (7.8)

183 (7.2)

178 (7.0)

270 (10.6)

190 (7.5)

636 (25.0)

626 (24.6)

9 (0.4)

7 (0.3)

60 (2.4)

50 (2.0)

L = 0.1 nH

Description

The HSCH-9101 single, the

HSCH-9201 series pair, and the

HSCH-9251 anti-parallel pair are

advanced gallium arsenide

Schottky barrier diodes. These

devices are fabricated utilizing

molecular beam epitaxy (MBE)

manufacturing techniques and

feature rugged construction and

consistent electrical performance.

A polyimide coating provides

scratch protection and resistance

to contamination.

HSCH-9201

115 (4.5)

105 (4.1)

280 (11.0)

200 (7.8)

183 (7.2)

178 (7.0)

346 (13.6)

266 (10.5)

712 (28.0)

702 (27.6)

9 (0.4)

7 (0.3)

60 (2.4)

50 (2.0)

L = 0.1 nH

HSCH-9251

Junction Side Up

125 (4.9)

115 (4.5)

290鹵50 (11.0)

200 (7.8)

183 (7.2)

178 (7.0)

280鹵50 (10.6)

190 (7.5)

712 (28.0)

702 (27.6)

9 (0.4)

7 (0.3)

60 (2.4)

50 (2.0)

L = 0.1 nH

DIMENSIONS IN

碌m

(1/1000 inch)

5965-8851E

3-76

next

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