1 m V/碌W. Where a high-Q reactive
鈩?/div>
resistor, values of
緯
approaching
25 m V/碌W can be expected.
In applications below 10 GHz
where DC bias is not available and
where temperature sensitivity is a
design consideration, the HSCH-
9161 offers superior stability when
compared to silicon zero bias
Schottky diodes.
231
(9.1)
250
(9.8)
250
(9.8)
Description
Hewlett-Packard鈥檚 HSCH-9161
detector diode is a beamlead,
GaAs device fabricated using the
modified barrier integrated diode
(MBID) process
[1]
. This diode is
designed for zero bias detecting
applications at frequencies
through 110 GHz. It can be
mounted in ceramic microstrip
(MIC), finline and coplanar
waveguide circuits.
231
(9.1)
120
(4.7)
ALL DIMENSIONS IN MICRONS.
[1] The diode structure and process are
covered by U.S. Patent No. 4,839,709
issued to Mark Zurakowski on June 13,
1989, and assigned to Hewlett-Packard.
Bonding and Handling
For more detailed information,
see HP Application Note 999,
鈥淕aAs MMIC Assembly and
Handling Guidelines.鈥?/div>
3-83
5965-8854E
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