Beam Lead Schottky Diode
Pairs for Mixers and Detectors
Technical Data
HSCH-5500 Series
Features
鈥?Monolithic Pair
Closely Matched Electrical
Parameters
鈥?Low Capacitance
0.1 pF Maximum at 0 Volts
鈥?Low Noise Figure
Typical 7.5 dB at 26 GHz
鈥?Rugged Construction
4 Grams Minimum Lead Pull
鈥?Platinum Tri-Metal System
High Temperature Stability
鈥?Polyimide Scratch Protection
鈥?Silicon Nitride Passivation
Stable, Reliable Performance
Outline 04B
540 (21.0)
480 (19.0)
220 (9.0)
180 (7.0)
CATHODE
120 (5.0)
90 (3.5)
250 (10.0)
200 (8.0)
220 (9.0)
180 (6.0)
GOLD
BEAMS
GLASS
12 (0.5)
8 (0.3)
190 (7.0)
160 (6.0)
PLATINUM
METALLIZATION
GLASS
60 (2.4)
40 (1.5)
Description
These dual beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to I
R
drift.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical 6
gram pull strength) without
degrading capacitance.
CATHODE
ANODE
COMMON
DIMENSIONS IN
碌m
(1/1000 inch)
Maximum Ratings (for Each Diode)
Pulse Power Incident at T
A
= 25擄C .......................................................... 1 W
Pulse Width = 1
碌s,
Du = 0.001
CW Power Dissipation at T
A
= 25擄C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
鈥?Operating Temperature Range ...............................-65擄C to +175
擄C
T
STG
鈥?Storage Temperature Range ....................................-65擄C to +200擄C
Minimum Lead Strength ........................................ 4 grams pull on any lead
Diode Mounting Temperature ................................. 350擄C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
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