HSC2228Y Datasheet

IC型號(hào)：
HSC2228Y
PDF描述：
NPN EPITAXIAL PLANAR TRANSISTOR
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上傳產(chǎn)品規(guī)格書

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6527-B

Issued Date : 1993.01.15

Revised Date : 2000.10.01

Page No. : 1/3

HSC2228Y

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSC2228Y is designed for high voltage amplifier applications.

Absolute Maximum Ratings

鈥?/div>

Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

擄C

Junction Temperature ..................................................................................... 150

擄C

Maximum

鈥?/div>

Maximum Power Dissipation

Total Power Dissipation (Ta=25擄C) ............................................................................... 900 mW

鈥?/div>

Maximum Voltages and Currents (Ta=25擄C)

VCBO Collector to Base Voltage ...................................................................................... 160 V

VCEO Collector to Emitter Voltage ................................................................................... 160 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current ........................................................................................................ 50 mA

Characteristics

(Ta=25擄C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

*VCE(sat)

*VBE(sat)

*hFE

Cob

Min.

160

Typ.

Max.

0.6

320

Unit

MHz

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=160V, IE=0

VEB=5V

IC=2mA, IB=20mA

VCE=10V, IC=10mA

VCE=30V, IC=10mA

VCB=10V, f=1MHZ

*Pulse Test : Pulse Width

鈮?80us,

Duty Cycle鈮?%

Classification of hFE

Rank

Range

60-120

100-200

160-320

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