鈥?/div>
26 NC
25 A8
24 A9
23 A11
22 G
21 A10
20 E
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
Features
鈥?1.2 Micron Radiation Hardened Bulk CMOS
鈥?Total Dose 3 x 10
5
RAD (Si)
鈥?Transient Output Upset >5 x 10
8
RAD (Si)/s
鈥?LET >100 MEV-cm
2
/mg
鈥?Fast Access Time - 35ns (Typical)
鈥?Single 5V Power Supply
鈥?Single Pulse 10V Field Programmable
鈥?Synchronous Operation
鈥?On-Chip Address Latches
鈥?Three-State Outputs
鈥?NiCr Fuses
鈥?Low Standby Current <500碌A(chǔ) (Pre-Rad)
鈥?Low Operating Current <15mA/MHz
鈥?Military Temperature Range -55
o
C to +125
o
C
Description
The Intersil HS-6664RH is a radiation hardened 64K
CMOS PROM, organized in an 8K word by 8-bit for-
mat. The chip is manufactured using a radiation
hardened CMOS process, and utilizes synchronous
circuit design techniques to achieve high speed
performance with very low power dissipation.
On-chip address latches are provided, allowing easy
interfacing with microprocessors that use a
multiplexed address/data bus structure. The output
enable control (G) simpli鏗乪s system interfacing by
allowing output data bus control in addition to the chip
enable control (E). All bits are manufactured storing a
logical 鈥?鈥?and can be selectively programmed for a
logical 鈥?鈥?at any bit location.
Applications for the HS-6664RH CMOS PROM
include low power microprocessor based instrumenta-
tion and communications systems, remote data acqui-
sition and processing systems, and processor control
storage.
28 LEAD FLATPACK
CASE OUTLINE K28.A MIL-STD-1835, CDFP3-F28
TOP VIEW
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VDD
P
鈥?/div>
NC
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
鈥?P must be hardwired at all times to VDD, except during programming.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
Spec Number
File Number
840
518741
3197.3
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