ADE-208-208B(Z)
HRW2502A S
Silicon Schottky Barrier Diode
for Rectifying
Rev. 2
Jan. 1996
Features
鈥?Low forward voltage drop and suitable for high
effifiency rectifying .
鈥?Same power as
TO-220AB.
鈥?Small outline compared with
TO-220AB.
鈥?/div>
LDPAK S
package is suitable for high density
surface mounting.
Pin Arrangement
1
2
3
Ordering Information
Type No.
HRW2502A S
Laser Mark
W2502A
Package Code
LDPAK S
1 Anode
2 Cathode
3 Anode
Absolute Maximum Ratings
(Ta = 25擄C)
*
Item
Repetitive peak reverse voltage
Average forward current
Symbol
V
RRM
**
I
o
***
T
j
T
stg
Value
20
25
75
125
-40 to +125
Unit
V
A
A
擄C
擄C
Non-Repetitive peak forward surge current I
FSM
****
Junction temperature
Storage temperature
* Per one device
** See Fig.5
*** Square wave, Duty (1/2), Sum of two device, See Fig.4
**** Sine wave 10msec
Electrical Characteristics
(Ta = 25擄C)
*
Item
Forward voltage
Reverse current
ESD-capability
Thermal resistance
*
Per one device
Symbol
V
F
I
R
鈥?/div>
R
th(j-c)
Min
鈥?/div>
鈥?/div>
500
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
1.5
Max
0.44
1.0
鈥?/div>
鈥?/div>
Unit
V
mA
V
擄C/W
Test Condition
I
F
= 12.5 A
V
R
= 20 V
C=200pF
Both forward and reverse
direction 1 pulse
HRW2502AS相關(guān)型號PDF文件下載
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英文版
Silicon Schottky Barrier Diode for High Frequency Rectifying
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Silicon Schottky Barrier Diode for High Frequency Rectifying
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RR...
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ETC
1
2
3
