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HPND-4018 Datasheet

  • HPND-4018

  • Beam Lead PIN Diodes for Phased Arrays and Switches (71K in ...

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Beam Lead PIN Diodes for
Phased Arrays and Switches
Technical Data
HPND-4018
HPND-4028
HPND-4038
Features
鈥?Low Capacitance
0.025 pF Maximum at 1 MHz
Guaranteed Min./Max.
鈥?Fast Switching
2.0 nsec
鈥?Low Resistance at Low Bias
1.5
鈩?/div>
at I
F
= 10 mA (Typical)
鈥?Rugged Construction
Typical 10 Gram Lead Pull
鈥?Silicon Nitride Passivation
690 (27)
650 (26)
330 (13)
260 (10)
220 (9)
180 (7)
180 (7)
160 (6)
110 (4.5)
90 (3.5)
280 (11)
240 (9)
Description
The HPND-4018, 4028, and 4038
beam lead PIN diodes are
designed for low capacitance, low
resistance, and fast switching at
microwave frequencies. These
characteristics are achieved at
low bias levels for minimal power
consumption. Advanced process-
ing techniques ensure uniform
and consistent electrical perfor-
mance, allowing guaranteed
capacitance windows. This
translates to improved perfor-
mance in phased array
applications.
Rugged construction and strong
beams ensure high assembly
yields while nitride passivation
and polyimide coating ensure
reliability. Standard Hi-Rel
programs are available for all
three devices.
12 (0.47)
8 (0.32)
60 (2.4)
40 (1.6)
DIMENSIONS IN
碌M
(1/1000 INCH)
Outline 83
Maximum Ratings
Operating Temperature ................................................ -65擄C to +150擄C
Storage Temperature .................................................... -65擄C to +200擄C
Power Dissipation at T
CASE
= 25擄C ........................................... 250 mW
(Derate linearly to zero at 150
擄
C.)
Minimum Lead Strength ............................... 4 grams pull on either lead
per MIL-S-19500, LTPD = 20
Applications
These beam lead PIN diodes are
designed for use in stripline,
coplanar waveguide, or micro-
strip circuits. Applications
include phase shifting and
switching. The guaranteed
capacitance windows ensure
uniform performance in phased
array radar. The low capacitance
makes them ideal for circuits
requiring high isolation in the
series configuration. These
devices have been fully charac-
terized and S-parameters have
been provided.
5965-8878E
2-86

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