鈩?/div>
Typical
鈥?Rugged Construction
4 Grams Minimum Lead Pull
鈥?Nitride Passivated
.4 (10)
.3 (7)
CATHODE
GOLD LEADS
S
1
O
2
/Si
3
N
4
PASSIVATION
130 (5.1)
110 (4.3)
130 (5.1)
110 (4.3)
110 (4.3)
80 (3.1)
760 (29.9)
640 (25.2)
60 (2.4)
30 (1.2)
Description
The HPND-4005 planar beam lead
PIN diode is constructed to offer
exceptional lead strength while
achieving excellent electrical
performance at high frequencies.
High beam strength offers users
superior assembly yield, while
extremely low capacitance allows
high isolation to be realized.
Nitride passivation and polyimide
coating provide reliable device
protection.
220 (8.7)
180 (7.1)
DIMENSIONS IN
碌m
(1/1000 inch)
GLASS
SILICON
320 (12.6)
220 (8.7)
280 (11.0)
180 (7.1)
25 MIN (1.0)
Outline 21
Maximum Ratings
Operating Temperature ................................................ -65擄C to +175擄C
Storage Temperature .................................................... -65擄C to +200擄C
Power Dissipation at T
CASE
= 25擄C ........................................... 250 mW
(Derate linearly to zero at 175
擄
C.)
Minimum Lead Strength ............................... 4 grams pull on either lead
Diode Mounting Temperature ............................. 220擄C for 10 sec. max.
Applications
The HPND-4005 beam lead PIN
diode is designed for use in
stripline or microstrip circuits.
Applications include switching,
attenuating, phase shifting,
limiting, and modulating at
microwave frequencies. The
extremely low capacitance of the
HPND-4005 makes it ideal for
circuits requiring high isolation in
a series diode configuration.
2-83
5965-8877E
1
2
3
