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HPMX-3002 Datasheet

  • HPMX-3002

  • Silicon Bipolar RFIC 900 MHz Driver Amplifier

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Silicon Bipolar RFIC
900 MHz Driver Amplifier
Technical Data
HPMX-3002
Features
鈥?RFIC Medium Power
Amplifier
鈥?150-960 MHz Operating
Range
鈥?+22 dBm Typ. P
ldB
, +23 dBm
Typ. P
sat
@ 900 MHz
鈥?50 dB Typ. Power Control
Range
鈥?6 V, 160 mA Operation
鈥?S0-8 Surface Mount Package
with Improved Heatsinking
Plastic S0-8 Package
Description
Hewlett-Packard鈥檚 HPMX-3002 is
a silicon microwave monolithic
integrated circuit driver amplifier
housed in a S0-8 surface mount
plastic package. It operates over
the 150 - 960 MHz frequency
range, and at 900 MHz it produces
+23 dBm of saturated output
power, has 30 dB of small signal
gain and a 50 dB power control
range. The amplifier has a well-
matched input, and an open
collector output which provides
good linearity and efficiency and
is easy to externally match to 50
鈩?/div>
for optimal power output.
This device is well suited as a
driver amplifier for European
GSM (Global System for Mobile
communications) portable and
mobile telephone systems, or as
the output stage for other low
cost applications such as 900 MHz
ISM band spread-spectrum.
The HPMX-3002 is fabricated with
Hewlett-Packard鈥檚 15 GHz f
t
ISOSAT-II process, which
combines stepper lithography, ion
implantation, self-alignment
techniques, and gold metallization
to produce RFICs with superior
performance, uniformity and
reliability .
Pin Configuration
Applications
鈥?Driver Amplifier for GSM
Cellular Handsets
鈥?Driver or Output Stage for
900 MHz ISM Band
Transmitters
鈥?Driver or Output Stage for
Transmitters Operating in
the 150-960 MHz Range
GROUND AND
THERMAL
CONTACT
V
CC1
GROUND
RF
IN
1
2
3
4
8
7
6
5
GROUND AND
THERMAL
CONTACT
RF
OUT
AND V
CC2
POWER CONTROL
Functional Block Diagram
(2)
V
CC1
(1ST AND 2ND STAGES)
(4)
RF
IN
(6)
RF
OUT
AND V
CC2
(3RD STAGE BIAS,
OPEN COLLECTOR)
(1, 3, 7, 8)
GROUND
(5)
POWER CONTROL
5965-9661E
6-76

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