HPLR3103, HPLU3103
Data Sheet
July 1999
File Number
4501.2
52A, 30V, 0.019 Ohm, N-Channel Logic
Level, Power MOSFETs
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Features
鈥?Logic Level Gate Drive
鈥?52A鈥? 30V
鈥?Low On-Resistance, r
DS(ON)
= 0.019鈩?/div>
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
鈥?/div>
Calculated continuous current based on maximum allowable junction
temperature. Package limited to 20A continuous, see Figure 9.
Ordering Information
PART NUMBER
HPLU3103
HPLR3103
PACKAGE
TO-251AA
TO-252AA
BRAND
HP3103
HP3103
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T
to obtain the TO-252AA variant in tape and reel, e.g., HPLR3103T.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
6-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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