HN7G02FU
TOSHIBA Multi Chip Discrete Device
HN7G02FU
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
Unit: mm
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
-50
-50
-5
-100
Unit
V
V
V
mA
Q2 (MOS-FET) Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight:
g (typ.)
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Marking
Q1, Q2 Common Ratings
(Ta
=
25擄C)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note)
T
j
T
stg
Rating
200
150
-55~150
Unit
FT
mW
擄C
擄C
Note: Total rating
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
1
2003-03-12
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