HN7G01FU
Preliminary
TOSHIBA Multi Chip Discrete Device
HN7G01FU
Power Management Switch Application
Driver Circuit Application
Interface Circuit Application
路
路
Q1 (transistor): 2SA1955 equivalent
Q2 (MOS-FET): 2SK1830 equivalent
Unit: mm
Q1
(transistor)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
-15
-12
-5
-400
-50
Unit
V
V
V
mA
mA
Q2
(MOS-FET)
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg (typ.)
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Q1, Q2 Common Ratings
(Ta
=
25擄C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
200
125
-55~150
Unit
mW
擄C
擄C
Note 1: Total rating
Marking
Pin Assignment
(top view)
1
2003-03-27
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