HN3B02FU
TENTATIVE
TOSHIBA Transistor
Silicon PNP鈰匩PN Epitaxial Type (PCT Process)
HN3B02FU
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1
High voltage
High current
High h
FE
Excellent h
FE
linearity
(typ.)
: V
CEO
=
鈭?0V
: I
C
=
鈭?50mA
(max)
: h
FE
=
120鈭?00
: h
FE
(I
C
=
鈭?.1mA)
/ (I
C
=
鈭?mA)
= 0.95
Q2
High voltage
High current
High h
FE
Excellent h
FE
linearity
: V
CEO
= 60V
: I
C
=
150mA
(max)
: h
FE
=
120鈭?00
: h
FE
(I
C
= 0.1mA) / (I
C
= 2mA) = 0.95 (typ.)
Q1 Maximum Ratings
(Ta
=
25擄C)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
鈭?0
鈭?0
鈭?
鈭?50
鈭?0
Unit
V
V
V
mA
mA
JEDEC
EIAJ
TOSHIBA
鈥?/div>
鈥?/div>
鈥?/div>
Marking
Q2 Maximum Ratings
(Ta
=
25擄C)
擄
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
150
30
Unit
V
V
V
mA
mA
Equivalent Circuit
(Top View)
1
2001-06-07
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