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HN29V1G91T-30 Datasheet

  • HN29V1G91T-30

  • 128M X 8-bit AG-AND Flash Memory

  • 92頁

  • RENESAS

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HN29V1G91T-30
128M
脳
8-bit AG-AND Flash Memory
REJ03C0056-0400Z
Rev. 4.00
Jul.20.2004
Description
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's
previous multi level cell Flash memory, using 0.13碌m process technology and AG-AND (Assist Gate-
AND) type Flash memory cell using multi level cell technology provides both the most cost effective
solution and high speed programming.
Features
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On-board single power supply: V
CC
= 2.7 V to 3.6 V
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Operation Temperature range: Ta = 0 to +70擄C
鈥?/div>
Memory organization
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Memory array: (2048+64) bytes
脳
16384 page
脳
4 Bank
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Page size: (2048+64) bytes
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Block size: (2048+64) bytes
脳
2 page
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Page Register: (2048+64) bytes
脳
4 Bank
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Multi level memory cell
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2bit/cell
鈥?/div>
Automatic program
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Page program
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Multi bank program
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Cache program
錚?/div>
2 page cache program
鈥?/div>
Automatic Erase
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Block Erase
錚?/div>
Multi Bank Block Erase
鈥?/div>
Access time
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Memory array to register (1st access time): 120
碌s
max
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Serial access: 35 ns min
Rev.4.00, Jul.20.2004, page 1 of 89

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