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HN1K05FU Datasheet

  • HN1K05FU

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

  • 123.05KB

  • 5頁

  • TOSHIBA

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HN1K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU
For Portable Devices
High Speed Switching Applications
Interface Applications
Unit: mm
路
路
路
High input impedance and extremely low drive current.
V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.5 to 1.0 V
Suitable for high-density mounting because of a compact package.
Maximum Ratings
(Ta
=
25擄C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
(Note)
T
ch
T
stg
Rating
20
10
100
200
150
-55
to 150
Unit
V
V
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
鈥?/div>
鈥?/div>
2-2J1C
Note: TOTAL rating
Electrical Characteristics
(Ta
=
25擄C) (Q1, Q2 common)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance 1
Drain-Source ON resistance 2
Drain-Source ON resistance 3
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
茂Y
fs
茂
R
DS (ON) 1
R
DS (ON) 2
R
DS (ON) 3
C
iss
C
rss
C
oss
t
on
Switching time
t
off
Test Condition
V
GS
=
10 V, V
DS
=
0 V
I
D
=
100
mA,
V
GS
=
0 V
V
DS
=
20 V, V
GS
=
0 V
V
DS
=
1.5 V, I
D
=
0.1 mA
V
DS
=
1.5 V, I
D
=
10 mA
I
D
=
1 mA, V
GS
=
1.2 V
I
D
=
10 mA, V
GS
=
1.5 V
I
D
=
10 mA, V
GS
=
2.5 V
V
DS
=
1.5 V, V
GS
=
0 V, f
=
1 MHz
V
DS
=
1.5 V, V
GS
=
0 V, f
=
1 MHz
V
DS
=
1.5 V, V
GS
=
0 V, f
=
1 MHz
V
DD
=
1.5 V, I
D
=
10 mA,
V
GS
=
0 to 1.5 V
V
DD
=
1.5 V, I
D
=
10 mA,
V
GS
=
0 to 1.5 V
Min
戮
20
戮
0.5
35
戮
戮
戮
戮
戮
戮
戮
戮
Typ.
戮
戮
戮
戮
70
15
10
7
12
3.4
12
0.35
0.2
Max
1
戮
1
1
戮
50
40
28
戮
戮
戮
戮
ms
戮
Unit
mA
V
mA
V
mS
W
W
W
pF
pF
pF
1
2002-01-16

HN1K05FU相關型號PDF文件下載

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