HN1K04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K04FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
路
路
路
路
High input impedance and extremely low drive current.
V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.8 to 2.5 V
Switching speed is fast.
Suitable for high-density mounting because of a compact package.
Maximum Ratings
(Ta
=
25擄C) (Q1, Q2 common)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
(Note)
T
ch
T
stg
Rating
50
10
50
200
150
-55
to 150
Unit
V
V
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg
鈥?/div>
鈥?/div>
2-2J1C
Note: TOTAL rating
Electrical Characteristics
(Ta
=
25擄C) (Q1, Q2 common)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
茂Y
fs
茂
R
DS (ON)
C
iss
C
rss
C
oss
t
on
Switching time
t
off
Test Condition
V
GS
=
10 V, V
DS
=
0 V
I
D
=
100
mA,
V
GS
=
0 V
V
DS
=
50V, V
GS
=
0 V
V
DS
=
5V, I
D
=
0.1 mA
V
DS
=
5V, I
D
=
10 mA
I
D
=
10 mA, V
GS
=
4.0 V
V
DS
=
5 V, V
GS
=0 V, f
=
1 MHz
V
DS
=
5 V, V
GS
=0 V, f
=
1 MHz
V
DS
=
5 V, V
GS
=0 V, f
=
1 MHz
V
DD
=
5 V, I
D
=
10 mA,
V
GS
=
0 to 4.0 V
V
DD
=
5 V, I
D
=
10 mA,
V
GS
=
0 to 4.0 V
Min
戮
50
戮
0.8
20
戮
戮
戮
戮
戮
戮
Typ.
戮
戮
戮
戮
戮
20
6.3
1.3
5.7
0.11
0.15
Max
1
戮
1
2.5
戮
50
戮
戮
戮
戮
Unit
mA
V
mA
V
mS
W
pF
pF
pF
ms
戮
1
2002-01-16
1
2
3
4
5
