HN1D03F
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03F
Ultra High Speed Switching Application
l
Built in anode common and cathode common.
Unit 1
l
Low forward voltage
l
Small total capacitance
Unit 2
l
Low forward voltage
l
Small total capacitance
Unit: mm
Q1, Q2: V
F (3)
= 0.90V (typ.)
Q1, Q2: C
T
= 0.9pF (typ.)
l
Fast reverse recovery time Q1, Q2: t
rr
= 1.6ns (typ.)
Q3, Q4: V
F (3)
= 0.92V (typ.)
Q3, Q4: C
T
= 2.2pF (typ.)
l
Fast reverse recovery time Q3, Q4: t
rr
= 1.6ns (typ.)
Unit 1, Unit 2 Common Maximum Ratings
(Ta = 25擄C)
擄
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
300 (*)
100 (*)
2 (*)
300
125
鈭?5~125
Unit
V
V
mA
mA
A
mW
擄C
擄C
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
鈥?/div>
SC-74
(*)
This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is
75% of the single diode one.
Marking
Pin Assignment
(Top View)
1
2001-06-07
1
2
3
4
5
