Storage Temperature ............................................................................................ -55 ~ +150
Junction Temperature ................................................................................... +150
Total Power Dissipation (Ta=25擄C) ............................................................................... 625 mW
鈥?/div>
Maximum Voltages and Currents (Ta=25擄C)
VCBO Collector to Base Voltage ..................................................................................... -300 V
VCEO Collector to Emitter Voltage .................................................................................. -300 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -800 mA
Characteristics
(Ta=25擄C)
Symbol
BVCBO
BVCEO
BVEBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Min.
-300
-300
-5
-
-
-
-
-
-
80
80
40
50
Typ.
-
-
-
-
-
-150
-
-
-
-
-
-
-
Max.
-
-
-
-5
-100
-
-700
-900
-1
-
-
-
-
Unit
V
V
V
uA
nA
mV
mV
mV
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA , IC=0
VCE=-300V, IB=0
VEB=-3V, IC=0
IC=-30mA, IB=-1mA
IC=-100mA, IB=-10mA
IC=-20mA, IB=-2mA
IC=-100mA, IB=-10mA
IC=-10mA, VCE=-10V
IC=-100mA, VCE=-10V
IC=-200mA, VCE=-10V
IC=-10mA, VCE=-20V, f=100MHz
*Pulse Test : Pulse Width
鈮?80us,
Duty Cycle鈮?%
MHz
Classification Of V
CE(sat)1
Rank
Range
SIN
<200mV
N
Typ. : 220mV
HMPSA92M
HSMC Product Specification
1
2
3
