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HMPSA18 Datasheet

  • HMPSA18

  • NPN SILICON TRANSISTOR

  • 42.55KB

  • 4頁

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6306-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA18
NPN SILICON TRANSISTOR
Description
The HMPSA18 is designed for low noise stage of audio amplifiers.
Features
鈥?/div>
Low Noise : 1.5 dB Max.
Absolute Maximum Ratings
鈥?/div>
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
擄C
Junction Temperature ................................................................................... +150
擄C
Maximum
鈥?/div>
Maximum Power Dissipation
Total Power Dissipation (Ta=25擄C) ............................................................................... 625 mW
鈥?/div>
Maximum Voltages and Currents (Ta=25擄C)
VCBO Collector to Base Voltage ........................................................................................ 45 V
VCES Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage .......................................................................................... 6.5 V
IC Collector Current ...................................................................................................... 200 mA
Characteristics
(Ta=25擄C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
45
45
6.5
-
-
-
-
300
500
500
100
-
Typ.
-
-
-
-
-
-
0.6
-
1100
1150
160
1.7
Max.
-
-
-
50
0.2
0.3
0.7
-
-
1500
-
3
Unit
V
V
V
nA
V
V
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
IC=10mA, IB=0.5mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=100uA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA, f=100MHz
VCB=5V, f=1MHz, IE=0
MHz
pF
*Pulse Test : Pulse Width
鈮?80us,
Duty Cycle鈮?%
Classification Of hFE1
Rank
hFE
A
>300
B
>500
HSMC Product Specification

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