6 鈥?20 GHz High-Gain Amplifier
Technical Data
HMMC-5620
Features
鈥?Wide-Frequency Range:
6 鈥?20 GHz
鈥?High Gain:
17 dB
鈥?Gain Flatness:
鹵
1.0 dB
鈥?Return Loss:
Input -15 dB
Output -15 dB
鈥?Single Bias Supply
Operation
鈥?Low DC Power Dissipation:
P
DC
~ 0.5 Watts
鈥?Medium Power:
20 GHz: P
-1dB
: 12 dBm
P
sat
: 13 dBm
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1410 x 1010
碌m
(55.5 x 39.7 mils)
鹵
10
碌m
(鹵 0.4 mils)
127
鹵
15
碌m
(5.0
鹵
0.6 mils)
80 x 80
碌m
(2.95 x 2.95 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
V
DD
I
DD
P
DC
P
in
T
ch
T
case
T
STG
T
max
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
Units
V
mA
watts
dBm
擄C
擄C
擄C
擄C
-55
-65
+165
+300
Min.
Max.
7.5
135
1.0
20
+160
Description
The HMMC-5620 is a wideband
GaAs MMIC Amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply offers
ease of use. E-Beam lithography
is used to produce gate lengths of
鈮?/div>
0.3
碌m.
The HMMC-5620 incor-
porates advanced MBE technol-
ogy, Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25擄C except for T
ch
, T
STG
, and T
max
.
5965-5442E
6-70
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