DC 鈥?50 GHz Variable Attenuator
Technical Data
HMMC-1002
Features
鈥?Specified Frequency Range:
DC -26.5 GHz
鈥?Return Loss:
10 dB
鈥?Minimum Attenuation:
2.0 dB
鈥?Maximum Attenuation:
30.0 dB
Description
The HMMC-1002 is a monolithic,
voltage variable, GaAs IC attenua-
tor that operates from DC to
50 GHz. It is fabricated using
MWTC鈥檚 MMICB process which
features an MBE epitaxial layer,
backside ground vias, and FET
gate lengths of approximately
0.4 mm. The variable resistive
elements of the HMMC-1002 are
two 750 mm wide series FETs
and four 200 mm wide shunt
FETs. The distributed topology of
the HMMC-1002 minimizes the
parasitic effects of its series and
shunt FETs, allowing the
HMMC-1002 to exhibit a wide
dynamic range across its full
bandwidth. An on-chip DC
reference circuit may be used to
maintain optimum VSWR for any
attenuation setting or to improve
the attenuation versus voltage
linearity of the attenuator circuit.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
RF Pad Dimensions:
DC Pad Dimensions:
1470 x 610
碌m
(57.9 x 24.0 mils)
鹵
10
碌m
(鹵 0.4 mils)
127
鹵
15
碌m
(5.0
鹵
0.6 mils)
60 x 70
碌m
(2.4 x 2.8 mils), or larger
75 x 75
碌m
(3.0 x 3.0 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
V
DC-RF
V
1
V
2
V
DC
P
in
T
mina
T
maxa
T
STG
T
max
Parameters/Conditions
DC Voltage to RF Ports
V
1
Control Voltage
V
1
Control Voltage
DC In/DC Out
RF Input Power
Minimum Ambient
Operating Temperature
Maximum Ambient
Operating Temperature
Storage Temperature
Maximum Assembly Temp.
Units
V
V
V
V
dBm
擄C
擄C
擄C
擄C
-65
-55
+125
+165
+300
Min.
-0.6
-5.0
-5.0
-0.6
Max.
+1.6
+0.5
+0.5
+1.0
17
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
5965-5452E
7-12