HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 1/2
HMX1225
HMM1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HMX1225/HMM1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings
(Ta=25擄C)
Parameter
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Part No.
HMX1225
HMM1225
Symbol
VDRM
VDRM
IT(rms)
IT(AV)
VGRM
IGM
PG(AV)
Tj
Tstg
Tsld
Min. Max. Unit
380
-
V
300
-
V
0.8
-
A
0.5
-
A
8
-
V
1
-
A
0.1
-
W
-40 125
擄C
-40 125
擄C
-
250
擄C
Test Conditions
Tj=40擄C to 125擄C
(RGK=1K)
TC=40擄C
Half Cycle=180擄,TC=40擄C
IGR=10uA
10us max
20ms max
1.6mm from case 10s max
Classification Of IGT
Rank
HMX1225
HMM1225
A
10-23 uA
10-23 uA
C
17-55 uA
17-55 uA
Electrical Characteristics
(Ta=25擄C)
Parameter
Off-State Leakage Current
Off-State Leakage Current
On-State Voltage
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-off Time
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
HMX1225 & HMM1225
Symbol
IDRM
IDRM
VT
VT(TO)
rT
IGT
VGT
IH
IL
dv/dt
di/dt
tgd
tg
R胃jc
R胃ja
Min Max Unit
Test Conditions
-
0.1 mA @VDRM (RGK=1K), Tj=125擄C
-
5
uA @VDRM (RGK=1K), Tj=25擄C
-
1.4
V
at IT=0.4A, Tj=25擄C
-
2.2
V
at IT=0.8A, Tj=25擄C
-
0.95 V
Tj=125擄C
-
600 Ohm Tj=125擄C
-
200 uA VD=7V
-
0.8
V
VD=7V
-
5
mA RGK=1K(ohm)
-
6
mA RGK=1K(ohm)
25
-
V/us VD=0.67*VDRM(RGK=1K), Tj=125擄C
30
-
A/us IG=10mA,diG/dt=0.1A/us, Tj=125擄C
-
500 ns IG=10mA,diG/dt=0.1A/us
Tc=85擄C,VD=0.67*VDRM
-
200 us
VR=35V,IT=IT(AV)
100
-
K/W
200
-
K/W
HSMC Product Specification
1
2
