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Product Description
The HMJ1 is a high dynamic range, GaAs
FET mixer. This active FET realizes a typi-
cal third order intercept point of +39 dBm at
an LO drive level of +17 dBm. The HMJ1
comes in a low cost, J-lead package. Typical
applications include frequency up/down
conversion, modulation and demodulation for
receivers and transmitters used in cellular
communications systems.
Functional Diagram
Required
RF 750-1000 MHz
LO 680-980 MHz
IF 20-100 MHz
+17 dBm Drive Level
+3V Bias (23 mA)
Low-Cost Surface Mount J-Lead
Package
Specifications
Parameter
Frequency Range:
RF
LO
IF
SSB Conversion Loss
Noise Figure
Isolation:
LO-RF
LO-IF
RF-IF
IIP3
Return Loss:
RF Port
LO Port
IF Port
Input P1dB
LO Drive Level
DC Current at +3V Bias
MHz
MHz
MHz
dB
dB
dB
dB
dB
dBm
dB
dB
dB
dBm
dBm
mA
750
680
20
7.7
9.2
20
30
33
29
40
24
39
8
13
19
23
17
23
1000
980
100
9.3
Units
Minimum
Typical
Maximum
Condition
RF = 900 MHz (0dBm)
35
Test conditions unless otherwise stated: RF = 900 MHz (-10 dBm), LO = 830 MHz (17 dBm), IF = 70 MHz and 25擄C.
Absolute Maximum Ratings
Parameter
Operating Case Temperature
Storage Temperature
Maximum Input Power
Rating
-40 to +85擄C
-55 to +125擄C
25 dBm
Ordering Information
Part No.
HMJ1
HMJ1-PCB
Description
High Dynamic Range FET
(Available in tape and reel)z
Fully Assembled Application Circuit
1. Operation of this device above any of these parameters may cause permanent damage.
2. Total sum of LO port and RF port power should not exceed 25 dBm.
Specifications and information are subject to change without notice.
WJ Communications, Inc.
鈥?Phone: 1-800-WJ1-4401 鈥?FAX: 408-577-6620 鈥?e-mail: sales@wj.com 鈥?Web site: www.wj.com
February 2004
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