MICROWAVE CORPORATION
v00.0703
HMC462
Features
Noise Figure: 2 dB @ 10 GHz
Gain: 15 dB
P1dB Output Power: +15 dBm @ 10 GHz
Self-Biased: +5.0V @ 63 mA
50 Ohm Matched Input/Output
3.12 mm x 1.38 mm x 0.1 mm
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC462 Wideband LNA is ideal for:
鈥?Telecom Infrastructure
鈥?Microwave Radio & VSAT
鈥?Military & Space
鈥?Test Instrumentation
鈥?Fiber Optics
Functional Diagram
General Description
The HMC462 is a GaAs MMIC PHEMT Low Noise
Distributed Ampli鏗乪r die which operates between 2
and 20 GHz. The ampli鏗乪r provides 15 dB of gain,
2.0 to 2.5 dB noise 鏗乬ure and +15 dBm of output
power at 1 dB gain compression while requiring
only 63 mA from a single +5V supply. Gain 鏗俛tness
is excellent at 鹵0.5 dB from 6 - 18 GHz making the
HMC462 ideal for EW, ECM and RADAR applica-
tions. The HMC462 requires a single supply of
+5V @ 63 mA and is the self-biased version of the
HMC463. The wideband ampli鏗乪r I/Os are inter-
nally matched to 50 Ohms facilitating easy integra-
tion into Multi-Chip-Modules (MCMs). All data is
with the chip in a 50 Ohm test 鏗亁ture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vdd= 5V
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 5V)
12.5
13.5
Min.
Typ.
2.0 - 6.0
15.5
鹵0.5
0.015
3.0
15
12
15.5
18
26.5
63
11
0.025
4.0
13
Max.
Min.
Typ.
6.0 - 18.0
15
鹵0.5
0.015
2.5
20
13
14
16
25.5
63
9.5
0.025
3.5
12
Max.
Min.
Typ.
18.0 - 20.0
14
鹵0.5
0.015
3.0
14
8
12.5
15.5
24
63
0.025
3.7
Max.
Units
GHz
dB
dB
dB/ 擄C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com