MICROWAVE CORPORATION
v00.0204
HMC459
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18.0 GHz
Features
+25 dBm P1dB Output Power
Gain: 17 dB
+31.5 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC459 wideband driver is ideal for:
鈥?Telecom Infrastructure
鈥?Microwave Radio & VSAT
鈥?Military & Space
鈥?Test Instrumentation
Functional Diagram
General Description
The HMC459 is a GaAs MMIC PHEMT Distrib-
uted Power Ampli鏗乪r die which operates between
DC and 18 GHz. The ampli鏗乪r provides 17 dB
of gain, +31.5 dBm output IP3 and +25 dBm of
output power at 1 dB gain compression while
requiring 290 mA from a +8V supply. Gain 鏗俛t-
ness is good making the HMC459 ideal for EW,
ECM and radar driver ampli鏗乪r applications. The
HMC459 ampli鏗乪r I/O鈥檚 are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test 鏗亁ture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
21
16.5
Min.
Typ.
DC - 2.0
18.5
鹵0.5
0.02
22
27
24
26.5
40
4.0
290
20.5
0.03
15
Max.
Min.
Typ.
DC - 6.0
18
鹵0.75
0.02
19.5
15
24.5
26.5
34
4.0
290
22
0.03
14
Max.
Min.
Typ.
DC - 10.0
17
鹵0.75
0.03
19
14
25
26.5
31.5
3.0
290
14
0.04
0.035
10
14
17
21
26
6.5
290
0.045
9
Max.
Min
Typ
DC - 18.0
12
Max
Units
GHz
dB
dB
dB/ 擄C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com